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1999. 09– 2003. 07    武漢理工大學(xué)，學(xué)士，導(dǎo)師：張聯(lián)盟                     
2003. 09– 2006. 07    清華大學(xué)， 碩士 ，導(dǎo)師：潘偉                             
2006. 08– 2009. 07    日本筑波大學(xué)， 博士 ，導(dǎo)師：Takashi Sekiguchi 

2006. 08– 2009. 07  日本物質(zhì)材料研究所，初級(jí)研究員，合作導(dǎo)師：Takashi Sekiguchi                   
2009. 08– 2011. 03  日本產(chǎn)業(yè)技術(shù)綜合研究所，博士后，合作導(dǎo)師：Hirofumi Matsuhata
2011. 03– 2013. 02  澳大利亞悉尼大學(xué)，博士后，合作導(dǎo)師：廖曉舟                                                     
2013. 04– 2014. 05  日本物質(zhì)材料研究所，博士后，合作導(dǎo)師：Takashi Sekiguchi   
2014. 05– 2017. 08  美國(guó)加州理工學(xué)院，博士后，合作導(dǎo)師：Ahmed Zewail
2017. 09– 至今        上海交通大學(xué)化學(xué)化工學(xué)院，特別研究員

1）半導(dǎo)體材料與器件的輸運(yùn)超快動(dòng)力學(xué) 
2）四維超快電鏡的超高時(shí)空分辨成像-衍射-能譜
3）納米光電磁學(xué)
4）催化反應(yīng)動(dòng)力學(xué) 

5）電池材料 

26. S. Peng, L. Xu, Z. Cao, C. Jiao, W. Liu, Y. Lu, W. Wang, B. Chen*. Visualizing in situ nucleation and growth dynamics of CdSe-based heterostructures regulated by the water/oil-phase microenvironment. Nano Lett. 25, 3662-3669 (2025).

25. C. Zheng, J. He, W. Liu, Z. Liu, L. Xu, Z. Cao, C. Jiao, B. Chen*. Ultra-long carrier lifetime of spiral perovskite nanowires realized through cooperative strategy of selective etching and passivation. Small 20, 2404861 (2024).

24. Y. Meng, Y. Zhou, X. Wang, W. Wei, Y. Hu, B. Chen*, D. Zhong*. Direct nanosecond multiframe imaging of irreversible dynamics in 4D electron microscopy. Nano Lett. 24, 7219-7226 (2024).

23. C. Zheng, W. Wang, L. Xu, X. Xiang, W. Liu, B. Chen*. Boosting the carrier lifetime and optical activity of CsPbX3 nanocrystals through aromatic ligand passivation. J. Phys. Chem. Lett. 15, 4633-4639 (2024).

22. B. Chen, J. Cao, D. Zhong. Chapter 10. 4D Ultrafast TEM, in book < In-Situ Transmission Electron Microscopy > L. Sun, T. Xu, Z. Zhang (eds.), Springer 2023.

21. C. Jiao, Z. Cao, J. He, Z. Liu, C. Zheng, S. Peng, B. Chen*. Co@Co cages engineered from hollowing MOFs for enhanced hydrogen evolution reaction performance. J. Phys. Chem. Lett. 14, 5447-5455 (2023).

20. Z. Cao, J. He, C. Jiao, Z. Liu, L. Xu, C. Zheng, S. Peng, B. Chen*. Chiroptical activity in all-inorganic intrinsically chiral perovskite-like nanocrystals synthesized via enantioselective strategy. J. Phys. Chem. Lett. 14 2533-2541 (2023).

19. Z. Cao, J. He, Z. Liu, H. Zhang, B. Chen*. Chirality affecting reaction dynamics of HgS Nanostructures simultaneously visualized in real and reciprocal space. ACS Nano 15, 16255-16265 (2021).

18. Z. Liu, Z. Cao, J. He, H. Zhang, Y. Ge, B. Chen*. Versatile printing of substantial liquid cells for efficiently imaging in situ liquid-phase dynamics. Nano Lett. 21, 6882-6890 (2021).

17. X. Fu*, S. Liu, B. Chen, J. Tang*, Y. Zhu*. Observation and control of unidirectional ballistic dynamics of nanoparticles at a liquid-gas interface by 4D electron microscopy. ACS Nano 15, 6801-6810 (2021).

16. J. He, Z. Liu, Z. Cao, H. Zhang, Y. Meng, B. Chen*, D. Zhong*. Visualizing the redox reaction dynamics of perovskite nanocrystals in real and reciprocal space.  J. Phys. Chem. Lett. 11, 2550-2558 (2020).

15. B. Chen*, X. W. Fu, M. Lysevych, H. H. Tan, C. Jagadish. Four-dimensional probing of phase-reaction dynamics in Au/GaAs nanowires. Nano Lett. 19, 781-786 (2019).

14. X. W. Fu*, S. D. Pollard, B. Chen, B. K. Yoo, H. Yang, Y. Zhu*. Optical manipulation of magnetic vortices visualized in situ by Lorentz electron microscopy. Sci. Adv. 4, eaat3077 (2018).

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13. X. W. Fu, B. Chen, J. Tang, M. Th. Hassan, A. H. Zewail. Imaging rotational dynamics of nanoparticles in liquid by 4D electron microscopy. Science 355, 494-498 (2017).

12. B. Chen, X. W. Fu, J. Tang, M. Lysevych, H. H. Tan, C. Jagadish, A. H. Zewail. Dynamics and control of gold-encapped gallium arsenide nanowires imaged by 4D electron microscopy. PNAS 114, 12876-12881 (2017).

11. X. W. Fu, B. Chen, J. Tang, A. H. Zewail. Photoinduced nanobuble-driven superfast diffusion of nanoparticles imaged by 4D electron microscopy. Science Advances 3, e1701160 (2017).

10. B. Chen, J. Wang, Q. Gao, Y. J. Chen, X. Z. Liao, C. S. Lu, H. H. Tan, Y. W. Mai, J. Zou, S. P. Ringer, H. J. Gao, C. Jagadish. Strengthening brittle semiconductor nanowires through stacking faults: Insights from in situ mechanical testing. Nano Letters 13, 4369-4373 (2013).

9. B. Chen, Q. Gao, Y. B. Wang, X. Z. Liao, Y. W. Mai, H. H. Tan, J. Zou, S. P. Ringer, C. Jagadish. Anelastic behavior in GaAs semiconductor nanowires. Nano Letters 13, 3169-3172 (2013).

8. B. Chen, Q. Gao, L. Chang, Y. B. Wang, Z. B. Chen, X. Z. Liao, H. H. Tan, J. Zou, S. P. Ringer, C. Jagadish. Attraction of semiconductor nanowires: An in situ observation. Acta Materialia 61, 7166-7172  (2013).

7. B. Chen, J. Wang, Y. W. Zhu, X. Z. Liao, C. S. Lu, Y. W. Mai, S. P. Ringer, F. J. Ke, Y. G. Shen. Deformation-induced phase transformation in 4H-SiC nanopillars. Acta Materialia 80, 392-399 (2014).

6. B. Chen, H. Matsuhata, T. Sekiguchi, K. Ichinoseki, H. Okumura. Surface defects and accompanying imperfections in 4H-SiC: Optical, structural and electrical characterization. Acta Materialia 60, 51-58 (2012).

5. B. Chen, T. Sekiguchi, T. Ohyanagi, H. Matsuhata, A. Kinoshita, H. Okumura. Evidence for a general mechanism modulating carrier lifetime in SiC. Physical Review B 81, 233203 (2010).

4. B. Chen, J. Chen, Y. Z. Yao, T. Sekiguchi, H. Matsuhata, H. Okumura. In situ monitoring of stacking fault formation and its carrier lifetime mediation in p-type 4H-SiC. Applied Physics Letters 105, 042104 (2014).

3. B. Chen, H. Matsuhata, T. Sekiguchi, A. Kinoshita, K. Ichinoseki, H. Okumura. Tuning minority-carrier lifetime through stacking fault defects: The case of polytypic SiC. Applied Physics Letters 100, 132108 (2012).

2. B. Chen, H. Matsuhata, T. Sekiguchi, T. Ohyanagi, A. Kinoshita, H. Okumura. Pinning of recombination-enhanced dislocation motion in 4H-SiC: Role of Cu and EH1 complex. Applied Physics Letters 96, 212110 (2010).

1. B. Chen, J. Chen, T. Sekiguchi, T. Ohyanagi, H. Matsuhata, A. Kinoshita, H. Okumura, F. Fabbri. Electron-beam-induced current study of stacking faults and partial dislocations in 4H-SiC Schottky diode.  Applied Physics Letters 93, 033514 (2008).

 2019    上海高等學(xué)校特聘教授計(jì)劃 

 2018    上海浦江人才計(jì)劃

歡迎對(duì)化學(xué)、材料、物理、超快科學(xué)等感興趣的本科生、碩士生、博士生和博士后加入我們！